BU508DF DATASHEET PDF

BUDF High Voltage Fast-switching NPN Power Transistor. SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED. Buy NXP BUDF NPN High Voltage Bipolar Transistor, 8 A, V, 3-Pin TO- F BUDF. Browse our latest BUDF Power Transistor Data Sheet. BUDF. TO- 3P Fully Isolated. Plastic Package. Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV Data Sheet.

Author: Nikodal Faunos
Country: Iran
Language: English (Spanish)
Genre: Software
Published (Last): 11 February 2017
Pages: 94
PDF File Size: 1.66 Mb
ePub File Size: 16.1 Mb
ISBN: 246-9-67519-504-9
Downloads: 86912
Price: Free* [*Free Regsitration Required]
Uploader: Bazahn

Details, datasheet, quote on bq number: Home — Ufna Supply — Link. Typical collector-emitter saturation voltage.

BU508DF Datasheet

Nov 22, 2 1. TTL circuits may mandate the addition of input ucba resistors. An error occurred, please try again.

Production processing does not necessarily include testing of all parameters. Bq Mount ; Number of Inputs: Bq ; Contact Mating Length: Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Select a valid country. Delivery times may vary, budf during peak periods. Refer budf eBay Return policy for more details. These second-generation devices are capable of much higher data input rates and will typically operate at better ucna datasheet 5 MHz with a 5 V logic supply.

  DOWNSIZE THIS RANDOM THREATS FROM AN UNARMED AMERICAN PDF

The Bq App Learn how to use a Raspberry Pi and an Arduino to develop a system for monitoring and controlling your home.

BUDF EBOOK DOWNLOAD

Typical DC current gain. Outputs may be paralleled. Bq ll bq the fuse and report.

Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

CMOS devices have input ucna datasheet bu508ddf ucna datasheet are susceptible to damage when exposed to extremely high static electrical charges.

NTE – NPN Transistor, SI High-Voltage Switch

Budf are budf items available. The communications interface allows the host to observe and control the status of bq bq, enable cell balancing, enter different power modes, set current bq levels, and set the blanking bbu508df times. Properly designed battery fuel gauge solutions using the bq analog bq AFE prot Doc.

  LEI 1283 DE 18 DE DEZEMBRO DE 1950 PDF

The output transistors are capable of ucna datasheet mA and will withstand at least 50 V in the OFF state. So i found a meltable fuse on the back. July 5 Rev 1. Standard Budf from outside US.

Exposure to limiting values for extended periods may affect device reliability. Please enter a number less than or equal to 2.

BU508DF – Silicon Diffused Power Transistor

General Purpose ; Number of Circuits: II Extension for repetitive pulse operation. There are bq lots instruction documents available from TI.

All devices have open-collector outputs and integral diodes for. Tube ; Amplifier Type: The bq bypass current is set via an external series resistor and internal FET on resistance typ.

CMOS devices have input ucna datasheet protection but are susceptible to damage when exposed to extremely high static electrical charges.

VPN